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UNISONIC TECHNOLOGIES CO., LTD 7N65
7 Amps, 650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
1
Power MOSFET
TO-220F
FEATURES
* RDS(ON) = 1.35 @VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 18 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 7N65L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Normal 7N65-TF3-T Order Number Lead Free Plating 7N65L-TF3-T Package TO-220F Pin Assignment 1 2 3 G D S Packing Tube
7N65L-TF3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn ,
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ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS
Power MOSFET
RATINGS UNIT 650 V 30 V TC = 25C 7.0 A Continuous Drain Current ID TC = 100C 4.7 A Drain Current Pulsed (Note 1) IDM 28 A Avalanche Energy, Single Pulsed (Note 2) EAS 530 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation (TC = 25C) PD 142 W Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL JA JC MIN TYP MAX 62.5 0.88 UNIT C/W C/W
ELECTRICAL CHARACTERISTICS (TC =25 , unless otherwise specified)
PARAMETER OFF Characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL BVDSS IDSS IGSS BVDSS/ VGS(TH) RDS(ON) gFS CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QDD TEST CONDITIONS VGS = 0 V, ID = 250 A VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V TJ ID = 250 A, Referenced to 25C VDS = VGS, ID = 250 A VGS = 10 V, ID = 3.5 A VDS = 40 V, ID = 3.5 A (Note 4) 2.0 1 8.0 MIN TYP MAX UNIT 650 1 1 100 -100 0.67 4.0 1.35 V A A nA nA V/ V S pF pF pF ns ns ns ns nC nC nC
Breakdown Voltage Temperature Coefficient ON Characteristics Gate Threshold Voltage Drain-Source ON-State Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 25 V, VGS = 0 V, f = 1MHz
1200 1600 150 190 18 25 35 79 80 52 30 6.5 13 80 165 160 120
VDD = 325V, ID = 7.0 A (Note 4, 5)
VDS= 520V, ID= 7.0A, VGS= 10 V (Note 4, 5)
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS Source- Drain Diode Ratings and Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =7.0 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 7.0 A, dIF/dt = 100 A/s (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 19.5mH, IAS = 7.0A, VDD = 50V, RG = 0 , Starting TJ = 25C 3. ISD 7.0A, di/dt 100A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Power MOSFET
MIN
TYP MAX UNIT 1.4 7.0 28 320 2.4 V A A ns C
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TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
P.W.
Period
D=
P. W. Period
VGS= 10V
I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv /dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD
Power MOSFET
VDS VGS RG
VDS
90%
10V
Pulse Width 1 s Duty Factor 0.1%
D.U.T.
VGS
10%
t D(ON ) tR tD (OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
50k 0.2 F 0.3 F
Same Type as D.U.T. 10V VDS QGS
QG
QGD
VGS DUT 1mA VG
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L VDS BVDSS
RD
VDD D.U.T.
10V tp
IAS
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
Power MOSFET
Drain-Source Breakdown Voltage, BVDSS (Normalized)
Drain-Source On-Resistance, RDS(ON) (Normalized)
Breakdown Voltage Variation vs . Temperature 1.2 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=250A
On-Resistance Junction Temperature 3.0 2.5 2.0 1.5 1.0 0.5 Note: 1. VGS =10V 2. I D=3.5A
0.8 -100 -50 0 50 100 150 200 Junction Temperature, T J ( )
0.0 -100 -50 0 50 100 150 200 Junction Temperature, T J ( )
Maximum Safe Operating Area
Operation in This Area is Limited by R
DS(ON)
Maximum Drain Current vs. Case Temperature 8
Drain Current, I D (A)
Drain Current, ID (A)
10
100 s 1ms 10 ms
6 4 2 0
1
DC Notes: 1 . T J=25 2 . T J=150 3 . Single Pulse
0.1 1
10
100
1000
25
Drain-Source Voltage, VDS (V)
50 75 100 125 150 Case Temperature, TC ( )
On-State Characteristics 10
Transfer Characteristics
Drain Current, I D (A)
Drain Current, I D (A)
1
V GS Top: 10V 8 V 7 .5V 7V 6.5V 6V 5.5V Bottorm:5.5V
10 25 1 150
Notes: 1. VDS =50 V 2. 250 s Pulse Test
0.1
Notes: 1. 250s Pulse Test 2. T C=25
0.1 1 10 Drain-to-Source Voltage, VDS (V)
0.1
2 4 6 8 10 Gate-Source Voltage, VGS (V)
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TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
On State Current vs. Allowable Case Temperature
Reverse Drain Current, IDR (A)
On-Resistance Variation vs Drain . Current and Gate Voltage
Drain-Source On-Resistance, RDS(ON) (ohm)
10 150 25 1 Notes: 1. VGS=0V 2. 250s Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V)
Gate Charge Characteristics 12
2.5 2.0 VGS =20V VGS=10V
1.5 1.0 0.5 0
Note: TJ=25
0
5 10 15 20 25 Drain Current, I D (A)
Capacitance Characteristics (Non-Repetitive)
2000 1600
Gate-Source Voltage, VGS (V)
C iss=C gs +C gd (C ds=shorted ) C os s=Cds +Cgd Crss=C gd
10 8 6 4 2 0
Capacitance (pF)
Ciss Coss
Notes: 1. V GS =0V 2. f = 1MHz
VDS=520V VDS=325V VDS =130V
1200 800 400 0 0.1
Crss 1 10
Note: ID=7A 0 10 20 30 40 50 60 70
Drain-SourceVoltage VDS (V) ,
Total Gate Charge, QG (nC)
Transient Thermal Response Curve 1
Thermal Response, JC (t)
0.1
Notes : 1. JC (t) = 0. 88 /W Max. 2. Duty Factor , D=t1/t2 3.TJM-TC=P DMx JC (t)
0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration t1 (sec) ,
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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